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| Product Description The SGA-3586 is a high performance SiGe HBT MMIC Amplifier. A Darlington configuration featuring 1 micron emitters provides high FT and excellent thermal perfomance. The heterojunction increases breakdown voltage and minimizes leakage current between junctions. Cancellation of emitter junction non-linearities results in high suppression of intermodulation products. Operation requires only a single positive voltage supply, 2 DC-blocking capacitors, a bias resistor and an RF choke. The matte tin finish on Sirenza's lead-free "Z" package is applied using a post annealing process to mitigate tin whisker formation and is RoHS compliant per EU Directive 2002/95. The package body is manufactured with green molding compounds that contain no antimony trioxide or halogenated fire retardants. Gain & Return Loss vs. Frequency 32 G A IN IR L ID = 35 mA (Typ.) SGA-3586 SGA-3586Z Pb RoHS Compliant & Green Package DC-5000 MHz Silicon Germanium Cascadable HBT MMIC Amplifier Product Features * Available in Lead Free, RoHS Compliant * * * * * * green package ( Z Suffix ) 50 Ohm Cascadable Gain Block High Gain: 25 dB typ. at 850 MHz High Output IP3: 25 dBm typ. at 1950 MHz Low Noise Figure: 2.5 dB typ. at 1950 MHz Low Current Draw: 35mA typ. Single Voltage Supply Operation 0 16 ORL 8 -20 Return Loss (dB) 24 -10 Gain (dB) -30 TLEAD=+25C 0 0 1 2 3 4 5 -40 Frequenc y (G H z) Applications * PA Driver Amplifier * Cellular, PCS, GSM, UMTS * IF Amplifier * Wireless Data, Satellite Min. 22.5 18.0 Typ. 25.0 20.0 18.5 13.0 12.5 24.5 25.0 5000 1950 1950 1950 3.0 31 9.5 14.0 11.0 20.0 2.5 3.25 35 97 TLEAD = 25C ZS = ZL = 50 Ohms Symbol G Parameter Small Signal Gain Freq. (MHz ) 850 1950 2400 850 1950 850 1950 Max. 27.5 22.0 Units dB P 1dB OIP3 Bandwidth Output Power at 1dB Compression Output Third Order Intercept Point (Tone Spacing = 1 MHz, Pout per tone = -5 dBm ) 11.0 23.0 dB m dB m MHz dB dB 3.5 3.5 39 dB V mA C/W Determined by Return Loss (>10dB) Input Return Loss Output Return Loss Noise Figure Device Operating Voltage Device Operating Current Thermal Resistance (junction to lead) Test Conditions: ID = 35 mA (Typ.) IRL ORL NF VD ID RTH, j-l The information provided herein is believed to be reliable at press time. Sirenza Microdevices assumes no responsibility for inaccuracies or omissions. Sirenza Microdevices assumes no responsibility for the use of this information, and all such information shall be entirely at the user's own risk. Prices and specifications are subject to change without notice. No patent rights or licenses to any of the circuits described herein are implied or granted to any third party. Sirenza Microdevices does not authorize or warrant any Sirenza Microdevices product for use in life-support devices and/or systems. Copyright 2005 Sirenza Microdevices, Inc.. All worldwide rights reserved. 303 South Technology Court Broomfield, CO 80021 EDS-101382 Rev. E 1 Phone: (800) SMI-MMIC http://www.sirenza.com SGA-3586 DC-5.0 GHz Cascadeable MMIC Amplifier Typical RF Performance at Key Operating Frequencies Symbol Parameter Units 100 500 Frequency (MHz ) 850 1950 2400 3500 G OIP3 P 1dB IRL ORL S 12 NF Small Signal Gain Output Third Order Intercept Point Output Power at 1dB Compression Input Return Loss Output Return Loss Reverse Isolation Noise Figure dB dB m dB m dB dB dB dB TLEAD = 25C 28.2 23.8 13.0 28.4 31.5 29.4 27.1 23.9 13.0 12.8 17.1 29.0 2.4 25.0 24.5 13.0 10.7 15.9 28.1 2.5 19.7 25.0 12.5 10.5 20.5 24.1 2.5 18.3 25.5 12.5 11.1 20.3 22.4 2.5 14.8 10.6 18.9 19.2 Test Conditions: ID = 35 mA (Typ.) ZS = ZL = 50 Ohms Tone Spacing = 1 MHz Pout per tone = -5 dBm Absolute Maximum Ratings Noise Figure vs. Frequency 5 4 Parameter Max. Device Current (ID) Max. Device Voltage (VD) Absolute Limit 70 mA 6V +18 dBm +150C -40C to +85C +150C ID= 35 mA (Typ.) Noise Figure (dB) Max. RF Input Power Max. Junction Temp. (TJ) Operating Temp. Range (TLEAD) 3 2 1 Max. Storage Temp. TLEAD=+25C 0 0 0.5 1 1.5 2 2.5 3 Operation of this device beyond any one of these limits may cause permanent damage. For reliable continous operation, the device voltage and current must not exceed the maximum operating values specified in the table on page one. Bias conditions should also satisfy the following expression: IDVD < (TJ - TLEAD) / RTH, j-l Frequency (GHz) OIP3 vs. Frequency 35 P1dB vs. Frequency 18 ID= 35 mA (Typ.) ID= 35 mA (Typ.) 30 15 OIP 3 (dBm) P1dB (dBm) 25 12 20 9 TLEAD=+25C 15 0 0.5 1 1.5 2 2.5 3 TLEAD=+25C 6 0 0.5 1 1.5 2 2.5 3 F re quency (G H z) Frequency (GHz) 303 South Technology Court Broomfield, CO 80021 EDS-101382 Rev. E 2 Phone: (800) SMI-MMIC http://www.sirenza.com SGA-3586 DC-5.0 GHz Cascadeable MMIC Amplifier Typical RF Performance Over Lead Temperature -- Bias: ID= 35 mA (Typ.) at TLEAD = +25C |S | vs. Frequency 21 32 |S | vs. Frequency 0 11 24 S 21(dB) S 21(dB) -10 16 -20 8 -40C +25C +85C -30 -40C +25C +85C 0 0 1 2 3 4 Frequency (GHz) 5 6 -40 0 1 2 3 4 Frequency (GHz) 5 6 |S | vs. Frequency -10 12 |S | vs. Frequency 0 22 -15 S 21(dB) -10 S 21(dB) -40C +25C +85C -20 -20 -25 -30 -30 0 1 2 3 4 Frequency (GHz) 5 6 -40C +25C +85C -40 0 1 2 3 4 Frequency (GHz) 5 6 NOTE: Full S-parameter data available at www.sirenza.com 303 South Technology Court Broomfield, CO 80021 EDS-101382 Rev. E 3 Phone: (800) SMI-MMIC http://www.sirenza.com SGA-3586 DC-5.0 GHz Cascadeable MMIC Amplifier Basic Application Circuit Application Circuit Element Values RBIAS VS 1 uF 1000 pF ID Reference Designator CB Frequency (Mhz ) 100 1000 pF 100 pF 470 nH 500 850 1950 68 pF 22 pF 22 nH 2400 56 pF 22 pF 18 nH 3500 39 pF 15 pF 15 nH CD RLDC Bias Inductor 220 pF 100 pF 100 pF 68 nH 68 pF 33 nH CD LC LC 4 RF in CB 1 SGA-3586 Recommended Bias Resistance for ID = 35 mA 3 VD CB RF out Supply Voltage (VS ) (Volts) Bias Resistance* (Ohms) <5 N/R 5 50 6 79 7 107 8 136 9 164 10 2 193 * Bias Resistance = RBIAS+ RLDC = ( VS-VD ) / ID Select RBIAS so that RBIAS + RLDC ~ the recommended bias resistance. Use 1% or 5 % tolerance resisistors or parallel combinations to attain the recommended bias resistance +/- 3%. RBIAS provides current stability over temperature. * N/R= No t Re c o m m e nd e d . C o nta c t S i r e nza te c hni c a l s up p o r t fo r guidance when available supply voltage is less than 5 Volts. VS RBIAS 1 uF 1000 pF CD LC A35 Device Pin Out Guide Pin # Function RF IN Description RF input pin. This pin requires the use of an external DC blocking capacitor chosen for the frequency of operation. Connection to ground. Provide via holes as close to the device ground leads as possible to reduce ground inductance and achieve optimum RF performance. RF output and bias pin. This pin requires the use of an external DC blocking capacitor chosen for the frequency of operation. CB CB 1 2, 4 GND 3 RF OUT / DC BIAS Part Identification Marking & Pin Out 3 Reliability & Qualification Information Parameter ESD Rating - Human Body Model (HBM) Moisture Sensitivity Level Rating Class 1A MSL 1 3 4 A35 2 4 35Z 2 The product qualification report may be dow nloaded at w w w.sirenza.com 1 Tin-Lead Lead Free RoHs Compliant 1 Part Ordering Information Caution: ESD sensitive Appropriate precautions in handling, packaging and testing devices must be observed. Part Number SGA-3586 SGA-3586Z P ackag e / L ead Composition Tin-Lead Lead Free, RoHs Compliant R eel Siz e 13" 13" Devices / R eel 3000 3000 303 South Technology Court Broomfield, CO 80021 EDS-101382 Rev. E 4 Phone: (800) SMI-MMIC http://www.sirenza.com SGA-3586 DC-5.0 GHz Cascadeable MMIC Amplifier 86 PCB Pad Layout Dimensions in inches [millimeters] Dimensions given for 50 Ohm RF I/O lines are for 31 mil thick Getek. Scale accordingly for different board thicknesses and dielectric contants. RF IN RF OUT 86 Nominal Package Dimensions Dimensions in inches [millimeters] A link to the 86 package outline drawing with full dimensions and tolerances may be found on the product web page at www.sirenza.com. 303 South Technology Court Broomfield, CO 80021 EDS-101382 Rev. E 5 Phone: (800) SMI-MMIC http://www.sirenza.com |
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